features 1 of 6 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rf mems SBB-2000 50mhz to 1000mhz, cascadable active bias ingap hbt mmic amplifier rfmd?s SBB-2000 is a high performance ingap hbt mmic amplifier utilizing a darlington con- figuration with an active bias network. the active bias network provides stable current over tem- perature and process beta variations. its efficient operation from a single 5v supply and its compact size (0.59mmx0.70mm) make it ideal for high-density multi-chip module applica- tions. it is well-suited for high linearity 5v gain block applications and it is internally matched to 50 . rfmd can provide 100% dc screening, visual inspection, and hi-rel wafer qualification. die can be delivered at the wafer level or picked to gel or waffle paks. gain and return loss versus frequency v s =5v, i s =90ma -40.0 -30.0 -20.0 -10.0 0.0 10.0 20.0 30.0 0.00.20.40.60.81.01.21.41.6 frequency (ghz) gain and return loss (db) irl gain orl gsg probe data with bias tees zs=zl=50 ohms, t=25c oip3=42.5dbm @ 250mhz p1db=21.5dbm @ 500mhz single fixed 5v supply compact die size (0.59mmx0.70mm) patented thermal design and bias circuit low thermal resistance applications pa driver amp rf pre-driver and rf receive path military communications test and instrumentation eds-106099 rev a preliminary package: bare die SBB-2000 50mhz to 1000mhz, cascadable active bias ingap hbt mmic ampli- fier parameter specification unit condition min. typ. max. frequency of operation 50 1000 mhz small signal gain 20.0 db freq=250mhz 20.0 db freq=500mhz 19.5 db freq=1000mhz output power at 1db compression 22.5 dbm freq=250mhz 21.5 dbm freq = 500 mhz 20.0 dbm freq=1000mhz output ip 3 42.5 dbm freq=250mhz 39.5 dbm freq=500mhz 34.5 dbm freq=1000mhz input return loss 30.0 db freq=500mhz output return loss 14.5 db freq=500mhz current 90 ma noise figure 3.0 db freq=500mhz thermal resistance 48.8 c/w junction to lead (89 pkg) test conditions: v d =5v, i d =90ma, t=25c, oip3 tone spacing=1mhz, p out /tone=0dbm. gsg probe data with bias tees.
2 of 6 preliminary eds-106099 rev a 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SBB-2000 typical performance (gsg probe data with bias tees) v d =5v, i d =90ma, t=25c, z=50 absolute maximum ratings parameter rating unit total current (i d )110ma device voltage (v d )5.5v power dissipation 0.61 w operating lead temperature (t l )-40 to +85 c rf input power +12 (tbr)* dbm storage temperature range -55 to +150 c operating junction temp (t j )+150c esd rating - human body model (hbm) class 1c *tbr=to be reviewed operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation, the device voltage and current must not exceed the maximum operatin g values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d <(t j -t l )/r th , j-l parameter units 50mhz 100mhz 250mhz 500mhz 750mhz 1000mhz small signal gain db 20.4 20.3 20.0 20.0 19.9 19.5 output 3rd order intercept point (see note 1) dbm 42.5 39.5 37.4 34.5 output power at 1db compression dbm 22.5 21.5 20.7 20.0 input return loss db 17.3 27.4 38.4 30.0 24.8 22.5 output return loss db 16.2 19.8 19.7 14.5 11.7 9.4 reverse isolation db 22.2 21.6 21.9 22.2 21.9 21.8 noise figure db 3.0 2.9 3.0 3.1 3.1 note 1: 0dbm/tone, 1mhz spacing. caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 6 preliminary eds-106099 rev a 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SBB-2000 typical performance (gsg probe data with bias tees) v d =5.0v, i d =90ma oip3 versus frequency (0dbm/tone, 1mhz spacing) 32.0 34.0 36.0 38.0 40.0 42.0 44.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 frequency (ghz) oip3 (dbm) -20c 25c 85c p1db versus frequency 18.0 19.0 20.0 21.0 22.0 23.0 24.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 frequency (ghz) p1db (dbm) -20c 25c 85c noise figure versus frequency 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 frequency (ghz) noise frequency (db) 25c 85c current versus voltage 60.0 70.0 80.0 90.0 100.0 110.0 120.0 4.8 4.9 5.0 5.1 5.2 5.3 v d (v) i d (ma) -20c 25c 85c
4 of 6 preliminary eds-106099 rev a 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SBB-2000 typical performance (gsg probe data with bias tees) v d =5.0v, i d =90ma s21 versus frequency 16.0 17.0 18.0 19.0 20.0 21.0 22.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 frequency (ghz) s21 (db) -20c 25c 85c s11 versus frequency -40.0 -35.0 -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 frequency (ghz) s11 (db) -20c 25c 85c s22 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 frequency (ghz) s22 (db) -20c 25c 85c s12 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 frequency (ghz) s12 (db) -20c 25c 85c
5 of 6 preliminary eds-106099 rev a 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SBB-2000 die dimensions bond pad description device assembly bond pad function/description rf in this pad is dc coupled and matched to 50 . an external dc block is required. rf out this pad is dc co upled and matched to 50 . dc bias is applied through this pad. die backside die backside must be connected to rf/dc ground using silver filled conductive epoxy. notes: 1. all dimensions in inches [millimeters]. 2. die thickness is 0.004 [0.100]. 3. typical bond pad is 0.004 (0.100) square. 4. backside metallization: gold. 5. bond pad metallization: gold. 6. backside is ground.
6 of 6 preliminary eds-106099 rev a 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SBB-2000 ordering information part number description devices/container SBB-2000 bare die
|
